国家/地区 中国（2）
IPC部 C（4）
IPC大类 C23（4）
IPC小类 C23C（4）
IPC C23C016/50（4）
发明人
公开年 2023（3）
申请年 2022（4）
专利权人

Depositing graphene or graphene oxide onto substrate from gaseous source of carbon precursor involves using plasma-enhanced chemical vapor deposition method, where carbon precursor consists of ethylene and the process is carried out in absence of carrier gas.

JOUIAD M, EL MARSSI M, LEJEUNE M

Normally-closed gallium nitride integrated device of large threshold voltage used in mobile phone, has sub-gate composed of gate layer connected through graphene film electrode to form series-parallel mixed double high frequency characteristics high electron mobility transistor integrated structure.

LUO M, CHENG T, WANG X, ZU Y, YU C

Processing substrate involves carrying substrate having silicon-containing film on surface of substrate into processing container, forming adsorption layer, forming silicon oxide layer, and forming graphene film on silicon oxide layer by supplying carbon-containing gas into processing container.

FURUYA H, YAMADA H, IFUKU R, MATSUMOTO T, WADA M, HARUHIKO F A

Preparing gallium nitride film used for blue light emitting diode, comprises e. g. drying pre-processed substrate with high-purity nitrogen, adding into vacuum reaction chamber, heating, stabilizing first preset time, and using remote ammonia plasma to process second preset time.

YAN T, YE Z, REN W, WANG R, ZHANG Y