国家/地区 世界知识产权组织（3）
IPC部 C（3）
IPC大类 C23（3）
IPC小类 C23C（3） B82Y（2） C01B（2）
IPC C23C016/26（3）
发明人
公开年 2023（2）
申请年 2022（3）
专利权人

Depositing graphene or graphene oxide onto substrate from gaseous source of carbon precursor involves using plasma-enhanced chemical vapor deposition method, where carbon precursor consists of ethylene and the process is carried out in absence of carrier gas.

JOUIAD M, EL MARSSI M, LEJEUNE M

Depositing nano-graphene comprises flowing hydrocarbon precursors into reaction chamber to adsorb onto metal layer of substrate at specific temperature, where metal layer interacts with adsorbed hydrocarbon precursor.

SHARMA K, VARADARAJAN B N

Film forming method by loading substrate into processing container, forming graphene film on substrate with plasma of process gas comprising carbon-containing gas, forming doped graphene film on substrate and/or graphene film with plasma of process gas comprising dopant gas.

YAMADA H, IFUKU R, MATSUMOTO T, KABUKI N