国家/地区 美国（6） 世界知识产权组织（4） 韩国（3）
IPC部 B（6）
IPC大类 B82（6）
IPC小类 C30B（6）
IPC C30B029/02（6）
发明人
公开年 2014（6）
申请年 2013（3）  2012（2） 
专利权人

Manufacture of graphene laminated structure used for electronic device, involves plasma-treating surface of hexagonal boron nitride sheet, depositing hexagonal boron nitride sheet on graphene sheet, and forming insulating layer.

KIM S, HAN S, HAN S A, KIM S W

Growing graphene used e.g. in graphene material, comprises annealing metal substrate up to growth temperature for annealing time period and in presence of non-reducing gas, and introducing gas mixture to grow graphene over the substrate.

DUAN X, ZHOU H

Unitary graphene layer or graphene single crystal useful for heat-spreading applications e.g. as a heat spreader or a heat sink product in e.g. hand-held device comprises closely packed and chemically bonded parallel graphene planes.

ZHAMU A, WANG M, XIONG W, JANG B Z

Manufacturing graphene involves preparing a carrier member on which the graphene is formed on one surface, exposing the graphene to dopant vapor, transferring the doped graphene onto a target member, and removing the carrier member.

YOON J, YOON J H

Repairing graphene, comprises applying first and second reactive material to first and second sides of the graphene layer, and reacting the reactive materials in the hole to produce a plug in the hole and to repair the graphene layer.

MILLER S A, DUERKSEN G L

Forming single-crystal grapheme for fabricating e.g. photovoltaic devices involves cleaning and annealing the surface of catalyst, applying carbon source to surface of catalyst, and growing single-crystal graphene on surface of catalyst.

TOUR J M, YAN Z