国家/地区 中国（6）
IPC部 C（6）
IPC大类 C23（6）
IPC小类 C23C（6）
IPC C23C014/02（2） C23C014/16（2） C23C014/35（2）
C23C016/26（2）
发明人 WANG C（6）
公开年 2021（4） 2022（2）
申请年 2021（6）
专利权人 UNIV CHINA G.（2） UNIV CHINA G.（2）

Low friction film for solar sailboard driving bearing inner wall of space aircraft, has film bottom layer attached to inner wall surface, and groove filled with lubricating material, where film is formed under vacuum environment.

WANG C, MENG D, FU Z, TANG Y, ZHU L, TIAN B, SHE D, LI W, YUE W, LIN N, KANG J

Rotary joint pin applied to spacecraft mechanism, has solid lubricating film that includes transition layer and surface layer from inside to outside, where surface layer is composite layer composed of titanium, lead and molybdenum disulfide.

WANG C, MENG D, FU Z, TIAN B, SHE D, YUE W, KANG J, LIU M, ZHU L

Method for preparing graphene film by chemical vapor deposition electron irradiation, involves attracting electrons in carbon plasma to surface of substrate to assist growth, forming electron irradiation, and depositing carbon plasma on substrate to generate graphene carbon film.

DIAO D, CHEN X, WANG C

Preparing hydrogel useful in functional material comprises e.g. adding biomass carbon powder into stannous chloride solution, filtering, cleaning, adding palladium chloride solution for activation, adding pretreated biomass carbon powder into chemical plating solution, filtering and drying.

YANG W, HONG Y, ZHOU G, WANG C, WANG S, HE W, ZHU X, ZHANG L, ADIKEGU, CHEN Y

Manufacturing copper alloy for hydrocooling exchangers based on single crystal silicon smelting comprises e.g. preparing furnace material comprising chromium, zirconium, silicon, magnesium, rare earth, and graphene supported cerium powder.

ZHANG Q, ZHANG H, YU G, LI L, MA M, WU B, WANG C, JING L

Vanadium pentoxide heat-sensitive film with sandwich structure used for silicon-based semiconductor, comprises substrate layer, buffer layer, and heat-sensitive layer including vanadium pentoxide layers and carrier concentration increasing layer located between adjacent vanadium pentoxide layers.

HUANG L, LU H, MA Z, WANG C, FANG M, CAI G, GAO J, HUANG S