国家/地区 美国（3） 韩国（2） 台湾（2）
IPC部 B（4）
IPC大类 B01（4）
IPC小类 B01J（4）
IPC C01B031/04（4）
发明人
公开年 2015（4）
申请年 2014（3） 
专利权人

Manufacture of graphene involves irradiating near-infrared ray to chamber containing metallic catalyst and carbon source, reacting metallic catalyst and carbon source, and growing graphene on surface of metallic catalyst.

HONG B H, HAN J H, HAN D H, CHOI W T, KIM J D

Method of preparing graphene from methane using catalyst in a reactive furnace.

CHEN M, CHEN B, KOO H, CHEN B F, KOO H S

Manufacture of monocrystal graphene film for semiconductor device, involves forming polycrystalline graphene on substrate using hydrocarbon gas, growing graphene film, forming catalyst, heating and recrystallizing.

HWANG C, HWANG C Y

Method for modifying e.g. I-V characteristics, of graphene i.e. semiconductor film, involves placing graphene film in vacuum environment, and radiating graphene film with electron beam to obtain graphene material.

HUANG C, CHU C, CHIU S, WANG C, WEI C, CHUNG C, WU B, HUANG J, QIU S, WANG J, ZHU J, WEI J, ZHONG C, HUANG C H, CHU C W, CHIU S M, WANG C C, WEI C M, CHUNG C J, WU B H