国家/地区 中国（3）
IPC部 C（4）
IPC大类 C23（4）
IPC小类 C30B（4）
IPC C30B029/02（4）
发明人 DUAN Y（2） HUANG D（2） LI X（2）
LI Z（2） SHI H（2） WU J（2）
YU J（2） ZHANG Y（2）
公开年 2018（3）
申请年 2017（4）
专利权人 CHONGQING GR.（2）

Nitrogen-doped large single crystal graphene film used as transparent conductive film for e.g. transparent electrode, is obtained by doping nitrogen atom into graphene lattice by graphite nitrogen.

LIU Z, PENG H, LIN L, SUN L, ZHANG J

Manufacturing multilayer graphene e.g. suspended or deposited multilayer graphene used for device e.g. sensor involves depositing graphene monolayer having protective layer on top on sample containing another graphene monolayer.

ZURUTUZA ELORZA A, CENTENO PEREZ A, PESQUERA RODRIGUES A, ZURUTUZA E A, CENTENO P A, PESQUERA R A

Graphene growth device with high temperature process chamber, has high temperature process chamber and receiving cooling chamber guide roller that are finally wound onto graphene substrate receiving roller.

DUAN Y, HUANG D, LI X, LI Z, SHI H, WU J, YU J, ZHANG Y

High temperature process chamber vertical arrangement of graphene continuous growth apparatus, has second high temperature process chamber and receiving cooling chamber guide roll received on graphene substrate receiving roll.

DUAN Y, HUANG D, LI X, LI Z, SHI H, WU J, YU J, ZHANG Y