国家/地区 中国（5） 韩国（3） 美国（3） 欧洲专利局（EPO）（2） 日本（2） 世界知识产权组织（2）
IPC部 C（6）
IPC大类 C01（6）
IPC小类 C01B（6）
IPC C01B031/02（5） C30B029/02（5） C01B031/04（4）
B82Y030/00（3） B82Y040/00（3） C23C016/26（3）
C30B025/00（2）
发明人
公开年 2011（6）
申请年 2011（6）
专利权人

Method for preparing single-crystal graphene in electronic device, involves coating hydrocarbon in metal foil, implementing thermal decomposition treatment in foil, and cooling foil to room temperature to obtain graphene sheet metal.

CHEN Y, LI P, LI Y, WANG Z, ZHANG W

Manufacturing graphene, comprises performing vapor phase epitaxy on substrate comprising silicon carbide surface, and controlling sublimation of silicon from the substrate by flow of e.g. inert gas (argon) through epitaxial reactor.

STRUPINSKI W, STRUPIAFSKI W, STRUPINSKI W O

Preparation of sulfur-doped graphene thin film by heating and preprocessing metal substrate in atmosphere of reduction protective gas, vacuuming container, and introducing mixed liquid of carbon source and sulfur source.

GAO H

Carbon-film laminate used for graphene-based electronic device, has monocrystal substrate, copper single-crystal thin film epitaxially grown on substrate, and graphene formed on copper single-crystal thin film.

HASEGAWA MASATAKA, ISHIHARA MASATOU, KOGA YOSHINORI, KIM JAEHO, TSUGAWA KAZUO, IIJIMA SUMIO, HASEGAWA M, ISHIHARA M, KOGA Y, KIM J, TSUGAWA K, IIJIMA S, YOSHINORI K, HO K J, KAZUO T, SUMIO I, MASATAKA H, MASATOU I, JAEHO K

Preparation of oxygen and hydrogen doped graphene by preparing intermediate film by reacting water solution and substance containing hydrogen, oxygen, and carbon element, polymerizing at hydrothermal condition, and hot processing.

LIU S, CHEN X, SONG L, TANG L, ZHUANG J, MA Y, JI R, WANG Y

Manufacturing graphene sheet used as electrode material, involves growing graphene sheet on graphene growth support by applying carbon sources and heat; and forming ripple on the sheet by cooling the graphene growth support and sheet.

AHN J, HONG B, KIM K, AHN J H, HONG B H, KIM K S