国家/地区 韩国（28）
IPC部 B（28）
IPC大类 B01（28） C01（28） B82（6）
H01（3） C07（2）
IPC小类 B01J（28）
IPC B01J019/10（28）
发明人 KIM S（3） GYEONG L H（2） KIM H（2）
KIM S H（2） OH I K（2） SEONG K L（2）
公开年 2013（20） 2014（6） 2012（2）
申请年 2012（28）
专利权人 KOREA ADVANC.（3） GYEONG L H（2） LG ELECTRONI.（2） SEONG K L（2）
UNIV PUSAN N.（2） UNIV ULSAN F.（2）

Manufacturing graphene useful as filler for transparent electrode, comprises crushing graphene nanoplate with expanded graphite or exfoliated structure, dispersing in solvent, ultrasonically treating, centrifuging, filtering and drying.

AN J C, KIM Y J, LEE S Y

Manufacture of graphene oxide complex for electrode, involves applying ultrasound to mix of graphene oxide dispersed solution and nickel hydroxide precursor solution, such that nickel hydroxide is provided between graphene oxide layers.

KIM J, JIN J, JEON S, YOU H

Manufacture of graphene involves mixing graphite and sulfuric acid, adding permanganate, preparing permanganate sulfuric acid solution, adding water, filtering, dispersing in hydrochloric acid, sonicating oxidized graphite and reducing.

IN Y Y, JUNG Y H, HONG D E

Producing dry-type ionic polymer actuator, comprises producing graphite oxide, producing graphene oxide, producing graphene oxide buckypaper, generating graphene buckypaper, forming electrodes and ionic polymer between electrodes.

JEON J H, JUNG C Y, OH I K

Hierarchical structure of graphene-carbon nanotubes is obtained by growing graphene into carbon nanotubes having hierarchical structure by adding metal nanoparticles on graphene, and is metal-functionalized by metal precursor.

BAE S, KIM H, OH I, BAE S H, KIM H J, OH I K

Manufacture of reduced graphene oxide used for transparent electrodes of e.g. storage batteries, involves dispersing graphene oxide in solvent to obtain dispersion solution, adding ammonia borane to dispersion solution, and refluxing.

PARK S, HAN J W

Manufacturing graphene, comprises removing hydrogen, nitrogen and oxygen content from graphite granule, crushing with metal components and sulfur, performing heat treatment, mixing gas-doped powder and carrying out ultrasonic treatment.

GYEONG L H

Manufacturing boron-doped reduced graphene, useful as semiconductor with p-type characteristics, comprises adding boron oxide to graphene oxide, removing solvent from resulting solution to obtain solid mixture, and heating the solid mixture.

KIM H, DA YOUNG Y, PARK M, LIM S H, GON S J, LEE S S

Manufacturing large amount of pure graphene comprises granulating pulverized e.g. graphite metal component, removing humidity, milling graphite, mixing with solvent, conveying graphite powder for ultrasonic treatment and separating graphene.

GYEONG L H

Manufacture of graphene oxide powder involves spraying graphene oxide solution and drying sprayed solution.

LEE D, LEE S, SEO B, BYUN N