国家/地区 美国（6）
IPC部 B（6）
IPC大类 B01（6） C01（6） C23（3）
B82（2） H01（2）
IPC小类 B01J（6）
IPC B01J019/12（2） B01J023/46（2） B01J035/00（2）
C01B003/04（2） C01B032/184（2）
发明人 AHN J（2） JEONG H（2） JO Y S（2）
LEE J（2） LEE J K（2） LEE S（2）
LEE W（2） NAM S W（2） SOHN H（2）
YOON C W（2）
公开年 2021（2）
申请年 2021（2） 
专利权人 KOREA INST SCI TECHNOLOGY（6）

Membrane reactor used in hydrogen fuel cell system for processing ammonia, includes reaction region, permeate region, reinforcement insert and composite membrane, where reaction region comprises bed filled with catalyst for dehydrogenation reaction, containing ruthenium on metal-doped support.

NAM S W, HAN J, KIM Y C, JANG S C, JEONG H, SOHN H, YOON C W, JO Y S

Catalyst used for ammonia dehydrogenation, comprises support comprising monocrystalline material having hexagonal structure, and catalyst metal supported on support.

JO Y S, CHA J Y, JEONG H S, KIM Y M, SOHN H T, YOON S P, NAM S W, LEE T J, YOON C W, HAN J H, YOUNGSEOKCHO, CHA J, JEONG H, SONHYUNTAE, YOON S, NAM S, TAIKJIN L, YUN C, HAN Z, YOON C, LI Z, SOHN H, JIN R, CAO Y

Method for manufacturing diamond-graphene hybrid thermal management material, involves converting predetermined thickness of partial area of one side or both sides of diamond base material into vertical graphene, where diamond base material serves as heat spreader.

JU H, LEE J K, SU J

Synthesizing graphene pattern by physically adhering catalyst block including catalyst material to portion of growth substrate, and forming graphene thin film selectively at interface between catalyst block and growth substrate.

PARK J, SIM Y, KIM J, SIM Y M, PARKJAEHYUN

Fabrication method for AA stacked graphene-diamond hybrid material involves maintaining diamond matrix at temperature having stable graphene phase in hydrogen gas atmosphere, and converting diamond surface into graphene in certain thickness.

LEE J, LEE S, AHN J, LEE W

Stacked graphene-diamond hybrid material for semiconductor device comprises diamond matrix, and stacked graphene configured to be converted in certain thickness from a lattice plane cut by surface of matrix due to alternative loss of plane.

AHN J, LEE J, LEE S, LEE W, AHN J P, LEE J K, LEE S C, LEE S H, LEE W S, LEE U