国家/地区 韩国（5）
IPC部 B（6）
IPC大类 B01（6） C01（6） B82（2）
IPC小类 B01J（6）
IPC C01B031/02（6）
发明人 GON S J（2） KIM H（2） KU B C（2）
LEE S S（2） LIM S H（2） PARK M（2）
公开年 2014（2）
申请年 2011（2）  2012（2）  2013（2） 
专利权人 KOREA INST SCI TECHNOLOGY（6）

Producing graphene useful for manufacturing pulse laser resonator of pulse laser, comprises providing a substrate to grow graphene by depositing a metal film on a transparent supporting member, and growing by laser irradiating the substrate.

SONG Y W, PARK J H, DEBNATH P

Manufacture of high quality graphene for high quality graphene film and electronic material, involves filling carbon rod, graphite powder and metal catalyst, filling buffer gas into reaction chamber, and evaporating in reaction chamber.

KIM M J, OH I S, KU B C

Manufacture of doped graphene for manufacturing semiconductor, involves mixing graphite powder and acid solution, oxidizing, drying, impregnating graphite oxide solid to organic compound aqueous solution, microwave heating and reducing.

LEE S S, KIM H, PARK M, LIM S H, GON S J, KWANG H L, KIM T A

Manufacturing boron-doped reduced graphene, useful as semiconductor with p-type characteristics, comprises adding boron oxide to graphene oxide, removing solvent from resulting solution to obtain solid mixture, and heating the solid mixture.

KIM H, DA YOUNG Y, PARK M, LIM S H, GON S J, LEE S S

Fabrication method for AA stacked graphene-diamond hybrid material involves maintaining diamond matrix at temperature having stable graphene phase in hydrogen gas atmosphere, and converting diamond surface into graphene in certain thickness.

LEE J, LEE S, AHN J, LEE W

Method for manufacturing carbon material for laminated product, involves placing carbon atom in graphene layer, forming polymer layer in graphene layer, stabilizing atom, carbonizing polymer layer, and coating solution on polymer layer.

JO H I, LEE S H, KU B C, KIM J K, KIM T W, HWANG S Y