国家/地区
IPC部 B（3）
IPC大类 B01（3）
IPC小类 B01J（3）
IPC C23C014/14（3）
发明人
公开年 2022（2）
申请年 2021（3）
专利权人

Preparing metal nanoparticle comprises placing boron powder and metal in cleaned crucible, degassing, annealing single crystal metal sheet substrate, growing single layer of boron on substrate and depositing metal on boron-coated substrate by vacuum heating and forming metal dispersion.

DAI D, MA Z, ZHAO X, WANG H

Metal catalyst layer used for producing graphene, laminated and crystallized on c-plane of substrate having corundum structure, having face-centered cubic structure.

NARUTSUKA S, NAKAJIMA R

Producing octahedral transition metal dichalcogenides involves forming transition metal layer on substrate and injecting chalcogenide-containing gas onto the substrate together with plasma treatment.

VINIT K, KIM H U, LEE J, SEOK H, KIM T, KIM T S, SEOK H H, WOO K H, CANADEVINIT