国家/地区 韩国（3） 美国（2）
IPC部 B（3）
IPC大类 B01（3）
IPC小类 B01J（3）
IPC C01B032/186（3）
发明人
公开年 2022（3）
申请年 2021（2） 
专利权人

Nanocrystalline graphene used for complementary metal-oxide-semiconductor process, comprises grains in stack of graphene sheets.

KIM S, BYUN K, CHO Y, SHIN K, LEE E, LEE C, SONG H, SHIN H, YOON J, LEE S, LIM H, BYUN K E, CHO Y C, SHIN K W, LEE C S, SONG H J, SHIN H J, SU Y J, LEE S Y, LIM H S, LI Z, YOUN J, SHEN X, LI C, LI Y, ZHAO L, JIN S

Manufacturing graphene wrinkles using three-dimensional structure patterning process comprises etching transition metal thin film to form three-dimensional pattern and inserting into chemical vapor deposition chamber to synthesize graphene.

KIM J, WIMALANANDA M D S, LEE J M

Manufacturing monocrystalline graphene for display, secondary battery, solar cell, light-emitting device, catalyst and sensor, involves supplying aromatic carbon gas onto single-crystalline metal catalyst to manufacture graphene.

KIM B J, CHOI J, CHOI J Y, JUN K