国家/地区 美国（4） 中国（3） 韩国（3） 欧洲专利局（EPO）（2） 日本（2） 世界知识产权组织（2）
IPC部 B（5）
IPC大类 B05（5）
IPC小类 B05D（5）
IPC B05D005/12（4） B82Y030/00（4） B82Y040/00（4）
C01B031/02（4） H01B001/04（4） B32B009/04（2）
C01B031/00（2） C01B031/04（2） C23C016/26（2）
发明人
公开年 2011（5）
申请年 2011（5）
专利权人

Film, useful in semiconductor devices for displays devices and field effect transistors, comprises a base layer having amino groups, and a reduced graphene oxide layer formed on the base layer.

KOBAYASHI T, TOSHIYUKI K

Preparation of graphene-type conductive material involves applying oxide graphene sol and metal salt solution and/or metal colloidal solution on substrate layer, separating, forming solid film and treating at specified condition.

LIANG M, ZHI L

Method for manufacturing graphene thin film of capacitor, involves manufacturing precursor solution, dispersing graphite oxide powder into solvent, and forming graphene thin film by generation of static attraction.

KIM K B, HEECHANG Y, SEONG M B, BEOM K G, CHANG Y H, MIN P S

Producing two-dimensional nanomaterials comprises e.g. providing a mixture comprising e.g. graphene oxide particles and water, adding a sol precursor compound to the mixture, and reacting the mixture in a sol/gel process to form gel.

FENG X, IVANOVICI S, MUELLEN K, YANG S, MULLEN K

Manufacturing graphene comprises preparing a subject substrate, forming a metal thin film, supplying a carbon source material, heating, diffusing carbon atoms, and forming graphene on the subject substrate.

KWON S, PARK K, YOON E, KWAK J, KWON S Y, YOON U