国家/地区 韩国（15）
IPC部 B（15）
IPC大类 B05（15） C01（15） B82（12）
H01（11） B32（10） C23（9）
B01（2）
IPC小类 B05D（15）
IPC C01B031/02（15）
发明人 CHOI J Y（4） CHOI J（3） SHIN H J（3）
CHOI W（2） CHOI W M（2） KIM H K（2）
SHIN H（2） YOON S（2） YOON S M（2）
公开年 2011（15）
申请年 2010（10）  2011（3）  2009（2） 
专利权人 SAMSUNG ELEC.（6） UNIV SUNGKYU.（2） UNIV SUNGKYU.（2）

Super hydrophobic graphene, has surface part in which multiple cylindrical projections are formed, where one of projections occupies 20 percent of graphene in total body surface area.

CHOI J Y, HAN G H, LEE Y H, SHIN H J

Film, useful in semiconductor devices for displays devices and field effect transistors, comprises a base layer having amino groups, and a reduced graphene oxide layer formed on the base layer.

KOBAYASHI T, TOSHIYUKI K

Method for manufacturing graphene thin film of capacitor, involves manufacturing precursor solution, dispersing graphite oxide powder into solvent, and forming graphene thin film by generation of static attraction.

KIM K B, HEECHANG Y, SEONG M B, BEOM K G, CHANG Y H, MIN P S

Manufacturing graphene comprises preparing a subject substrate, forming a metal thin film, supplying a carbon source material, heating, diffusing carbon atoms, and forming graphene on the subject substrate.

KWON S, PARK K, YOON E, KWAK J, KWON S Y, YOON U

Roll-to-roll doping method for large-area graphene area, involves passing graphene film through doping solution that contains dopant or dopant vapor for doping graphene film.

AHN J, BAE S, HONG B H, KIM H K, BAE S K, GANG B S, GEUN K H, HUI H B, HYEON A J

Applying a coating composition on substrate comprises preparing a coating by mixing carbon in form of carbon nanotubes, graphene and/or fullerenes with metal particles and two-dimensionally or selectively applying the coating on substrate.

ADLER U, RODE D, BURESCH I, WANG J, FRECKMANN D, SCHMIDT H, ROHDE D, WANG Y

Composite structure for manufacturing a logic device, a memory device, a supercapacitor and a flexible and stretchable device, comprises graphene sheets disposed at a regular interval, and a nanostructure oriented through the sheets.

CHOI B, LEE E, WHANG D, KIM B, CHOE P Y, I E K, HWANG T M, KIM P S, CHOI B L, WHANG D M, KIM B S, LEE E K

Fabricating graphene to fabricate FET, comprises forming alloy catalyst layer on substrate using sputtering method and/or evaporation method, and forming graphene layer on alloy catalyst layer by supplying hydrocarbon gas onto substrate.

WOO Y, SEO D, SEO S, CHUNG H, KANG S, HEO J, SEO S A, CHUNG H J, KANG S R, HEO J S, WOO Y S, JUNG H J, HUH J S, YEO R, XU D, HUH J, JUNG H

Layered structure, useful in an electrical device such as LED, solar cell, power device, nanogenerator or an organic light-emitting device, comprises graphene and a layer comprising an organic material having a conjugated system.

CHOI J, KIM D, IHN S, CHOI J Y, KIM D H, IHN S G

Graphene sheet used in e.g. field emission display, liquid crystal display, organic light emitting device, super-capacitor, field-effect transistor, or memory device comprises graphene containing ten or fewer wrinkles of the grapheme.

YOON S, CHOI J, CHOI W, SHIN H, YOON S M, CHOI J Y, CHOI W M, SHIN H J