国家/地区 美国（5）
IPC部 B（5）
IPC大类 B01（5）
IPC小类 B32B（5）
IPC C23C016/26（5）
发明人 CHOI J（2） CHOI J Y（2） CHOI K（2）
HEIGHT M（2） PARK H（2） PARK H G（2）
SHIN H（2） SHIN H J（2） YOON S（2）
YOON S M（2）
公开年 2012（2）
申请年 2012（2） 
专利权人 HEIQ MATERIA.（2） SAMSUNG ELEC.（2）

Formation of porous graphene layer used as semipermeable membrane, involves providing catalytically active substrate comprising copper-nickel alloy substrate, to catalyze graphene formation under chemical vapor deposition conditions.

CHOI K, PARK H G, HEIGHT M, CHOI K J, PARK H, PIAO H

Manufacture of porous graphene layer used for e.g. textile industries, involves carrying out chemical vapor deposition of carbon source on catalytically active substrate which catalyzes graphene formation, and forming graphene.

PARK H G, HEIGHT M, CHOI K, PARK H

Making crystalline graphene, used e.g. in electronic device, comprises e.g. performing first thermal treatment by supplying heat to inorganic substrate, and introducing vapor carbon supply source into reactor during first thermal treatment.

SHIN H, CHOI J, WOO Y, YOON S, SHIN H J, CHOI J Y, WOO Y S, YOON S M

Making doped single graphene sheets involves oxidizing graphite to non-electrically conductive graphite oxide followed by exfoliating in solvent, depositing metal or metal oxides, and reducing to electrically conductive graphene sheets.

DO I, DRZAL L T, MONGA A

Preparing graphene sheet, useful in e.g. electrical device, comprises forming film comprising graphitizing catalyst, heat-treating gaseous carbon source in presence of the catalyst to form graphene, and cooling graphene to form sheet.

CHOI J, SHIN H, YOON S, CHOI J Y, SHIN H J, YOON S M, IN Z