国家/地区 韩国（6） 美国（6） 中国（4） 欧洲专利局（EPO）（4） 日本（4） 世界知识产权组织（4） 加拿大（2） 德国（2）
IPC部 B（8）
IPC大类 B82（8） C01（8） H01（5）
B32（3） B05（2）
IPC小类 B82B（8）
IPC C01B031/02（8）
发明人 LEE J（2）
公开年 2010（8）
申请年 2009（5）  2008（2） 
专利权人

Manufacture of low-dimensional carbon-containing composites, involves mixing graphene, pitch and carbon material, and processing mixture.

HEON HEO S, MI JU H, HO CHOI S, YEON CHO G, HYEONG RYU D, SEUNG H H, HYE M J, SEONG H C, KWANG Y C, DOH H R

Platelet useful in electronic device comprises graphene layer and a protein layer on the surface of the graphene layer.

LAAKSONEN P, AHOPELTO J, LINDER M

Preparing graphene-carbon nanotube hybrid composite materials comprises confecting a suspension system, mixing intensively with polymer particles, discharging solvent, and putting into molds.

DU J, LIU P, TONG Y, ZENG Y, ZHAO J, ZHAO L

Manufacturing carbon nanotube-, fullerene- and/or graphene-containing coating for use as electromechanical component or lead frame, involves applying carbon nano-tubes, fullerene or graphene on tin-containing coating by mechanical treatment.

ADLER U, BURESCH I, PRIGGEMEYER S, RODE D, SCHMIDT H, ROHDE D

Nanocomposite material for energy storage device, i.e. double layer ultracapacitor, battery or supercapacitor includes mesoporous metal oxide bonded to graphene layer.

AKSAY I A, JUN L, KOU R, WANG D, LIU J, AKSAY I

Preparing graphene nanoribbons involves providing carbon nanotubes, and reacting carbon nanotubes with oxidant to form oxidized graphene nanoribbons.

HIGGINBOTHAM A, KOSYNKIN D W, PRICE K B, TOUR J M, KOSYNKIN D V, PRICE B K, TOUR J, KOSYNKIN D, DUQUE A, DUGUE A, PRICEHOELSCHER B K

Preparing graphene ribbons, comprises preparing graphitic material composed of e.g. graphene helices, and shortening the graphitic material by applying energy and decomposing the graphitic material into graphene ribbons.

LEE J, LEE S H, LEE W, LEE S, LEE U, LEE J K, LEE W S

Graphene nanostructure fabricating method for semiconductor device, involves performing anisotropic etching by using aligned oxide nanostructure as mask, and removing remaining oxide nanostructure after anisotropic etching.

HONG S, KIM T H, LEE J, HONG S H, LEE C Y, KIM T