国家/地区 中国（5）
IPC部 C（5）
IPC大类 C01（5） B82（4） H01（3）
IPC小类 C01B（5）
IPC C01B031/04（5） B82Y040/00（4） B82Y030/00（2）
C01B032/194（2） C01B032/20（2） H01M004/1393（2）
H01M004/583（2） H01M004/62（2） H01M010/0525（2）
发明人 GU C（5）
公开年 2016（5）
申请年 2016（5）
专利权人 UNIV ANHUI N.（3） CHINESE ACAD.（2）

Preparing tin dioxide/graphene composite material useful for resistance-type gas sensor, comprises e.g. carrying out hydrothermal process by carrying out ultrasonic dispersion of graphite oxide in water, reacting, and calcining precursor.

GU C, CUI Y, HUANG J, LIN X

Preparing nickel oxide/graphene nano-composite material comprises e.g. dispersing graphite oxide in water ultrasonically to obtain graphene oxide solution, mixing sulfuric acid, carrying out hydrothermal process, compounding and roasting.

HUANG J, LIU X, GU C, GAO L

Preparing molybdenum disulfide/graphene nanocomposite material comprises e.g. transferring mixed solution and three-dimensional columnar reductive graphene oxide into hydrothermal reactor and post-processing.

HUANG J, LIU X, GU C, CHEN Y

Regulating and controlling graphene band gap comprises preparing graphene sample on substrate, coating electron beam resist, coating electrode, exposing, developing, fixing to form and etching spin-coated electron beam resist.

GU C, ZHANG H, YANG H, TANG C, LI J

Preparing nanoscale graphene structure involves selecting substrate and growing graphene on substrate, depositing chromium film on graphene, etching graphene using ion beam etching technology, removing metallic film to obtain pure nanoscale.

GU C, LI J, QUAN B, YANG H, TANG C, ZHANG H