国家/地区 中国（3）
IPC部 C（3）
IPC大类 C01（3）
IPC小类 C01B（3）
IPC C01B032/186（3）
发明人 CHENG C（3）
公开年 2018（2）
申请年
专利权人 INST SEMICON.（2）

Preparation method of a graphene-CMOS monolithic integrated detector chip, involves depositing isolation layer on surface of CMOS integrated circuit, and etching through hole in isolation layer to fill metal.

CHEN H, HUANG Y, ZHANG H, CHENG C, CHEN R, HUANG B

Preparation of graphene monolayer by depositing small molecule of p-xylene on surface of copper foil as solid carbon source, and reacting solid carbon source and clean copper foil into reaction device with reducing gas and protective gas.

CHENG C, HUANG B, MAO X, DONG Y, ZHANG H, CHEN R, CHEN H

Preparation of graphene, involves taking substrate, depositing metal oxide layer on substrate, depositing metal layer over metal oxide layer, patterning metal layer and depositing graphene layer on patterned metal layer.

CHENG C, KANG P