国家/地区 英国（3）
IPC部 C（3）
IPC大类 C01（3） H01（3） C23（2）
C30（2）
IPC小类 C01B（3）
IPC C01B032/186（3） H01L021/02（3） C23C016/26（2）
C30B025/18（2） C30B029/02（2）
发明人 THOMAS S（3）
公开年 2022（2）
申请年 2021（3）
专利权人 PARAGRAF LTD（3）

Growing graphene layer structure on substrate used in opto-electronic device, e.g., solar cell, solar cell, light-emitting diode, organic light-emitting diode, electro-optic modulator, photodetector or diode, involves providing substrate on susceptor in chemical vapor deposition reaction chamber.

THOMAS S, GUINEY I, DIXON S

Forming a graphene layer structure used in Hall effect sensor, involves providing growth substrate having growth surface, and forming graphene layer structure on growth surface by chemical vapor deposition method, where growth surface is formed of material consisting of e.g. magnesium aluminate.

GRIFFIN R M, THOMAS S, GUINEY I, DIXON S

Forming graphene on silicon substrate for electronic device, comprises providing silicon wafer having growth surface free of native oxides in reaction chamber, and nitriding growth surface with nitrogen-containing gas with wafer.

DIXON S, GUINEY I, THOMAS S, THOMAS S C S