国家/地区 台湾（4）
IPC部 B（4）
IPC大类 B82（4）
IPC小类 B82Y（4）
IPC B82Y010/00（4）
发明人 FAN S（2）
公开年 2022（2）
申请年 2021（2） 
专利权人 HON HAI PREC.（2） UNIV TSINGHU.（2）

Manufacturing electronic device precursor e.g. organic LED, involves providing silicon wafer having growth surface, forming insulative layer on growth surface, forming graphene monolayer or multi-layer structure on insulative layer, forming further layers and/or electrical contacts.

BADCOCK T J, KAINTH J, DIXON S, GUINEY I, GRIFFIN R M

Method for preparing FET e.g. junction FET, involves providing interdigital electrode on graphene nanoribbon composite structure, where electrode covers set of protrusions and is electrically connected to set of graphene nano-ribbons.

ZHANG T, ZHANG L, JIN Y, LI Q, FAN S

Memory cell switch for reversibly opening and closing circuit, has ferroelectric material formed between graphene structure and conductive structure, where conductive structure provides switch into on and off states.

SANDHU G S, SANDHU G

Making thermoacoustic element involves arranging graphene film on metal substrate/forming laminate structure by stacking nonmetal substrate on substrate/removing substrate from laminate structure/forming through-holes in nonmetal substrate.

JIANG K, LIN X, XIAO L, FAN S, IM H Y, FAN F Y