国家/地区 中国（5）
IPC部 C（5）
IPC大类 C01（5） C09（5） H01（3）
IPC小类 C01B（5）
IPC C01B031/04（5）
发明人 LIU J（2） WANG H（2） WANG L（2）
XIE X（2） ZHANG Y（2）
公开年 2014（5）
申请年 2013（4） 
专利权人 SHANGHAI INS.（2）

Graphene film used in an electrode is obtainable by epitaxially growing metal layer on surface of substrate, peeling off the metal layer, and depositing graphene onto surface of metal layer.

WODTKE A, YU H K, ALEC W, HAK KI Y, YU H, YUK H K, YUK H

Thermal radiation film for e.g. electronic devices comprises heat-transfer layer formed by uniformly dispersed graphene microparticles and carbon nanotube.

KAGAWA S, SEIJI K

Preparation of graphene-based chip cooling material by reacting substrate, heating, plasma treating, depositing graphene, forming, cooling and transferring.

LIU J, XIE X, WANG L, ZHANG Y, WANG H

Preparation of nitrogen-doped graphene thin film for e.g. smartphone involves performing ultrasonic treatment to graphite oxide aqueous solution to obtain graphene oxide sol and mixing hydrazine hydrate solution and ethanol solution.

YANG Y, LV C, AN F, CHEN C, CAI R, SONG N

Manufacture of vertical-graphene heat-radiating material involves performing plasma pretreatment of growth substrate, carrying out plasma enhanced chemical vapor deposition on growth substrate, and transferring vertical-graphene.

WANG H, XIE X, WANG L, ZHANG Y, LIU J