国家/地区 美国（5）
IPC部 C（5）
IPC大类 C01（5） C23（5） H01（2）
IPC小类 C01B（5）
IPC C01B031/04（5）
发明人
公开年 2015（5）
申请年 2014（4） 
专利权人

Forming graphene film comprises placing substrate and carbon source into reaction chamber having gas inlet, and heating carbon source under flow of hydrocarbon-free gas to convert portion of carbon source into graphene film on the substrate.

DIJON J, TYURNINA A

Tire includes cover film made entirely of graphite or graphene deposited on inner surface of rubber inner layer that faces inner cavity of carcass.

FORTE G, FIORENZA P, PEZZULLO G

Method for modifying e.g. I-V characteristics, of graphene i.e. semiconductor film, involves placing graphene film in vacuum environment, and radiating graphene film with electron beam to obtain graphene material.

HUANG C, CHU C, CHIU S, WANG C, WEI C, CHUNG C, WU B, HUANG J, QIU S, WANG J, ZHU J, WEI J, ZHONG C, HUANG C H, CHU C W, CHIU S M, WANG C C, WEI C M, CHUNG C J, WU B H

Use of amine precursor or its ammonium salt for depositing graphene film on substrate by chemical vapor deposition (CVD).

SCHWAB M G, MUELLEN K, SACHDEV H, ITO Y, SCHWAB M G S, MILLEN K

Coated article comprises a low temperature component and a graphene coating formed from applying the graphene derivative over the low temperature component.

KALAGA M K, BHATTACHARYYA A, DEVI R M, SCHAEFFER J C, PARAKALA P, PABLA S S, SHEFFIELD J C, PALAKARA P, PABRA S S, CARAGA M K, DEVIE R M