国家/地区 中国（5）
IPC部 C（5）
IPC大类 C01（5） C23（5）
IPC小类 C01B（5）
IPC C23C016/02（5）
发明人
公开年 2022（5）
申请年 2022（4） 
专利权人

Iron-based substrate for producing graphene, is derived from factory waste carbon iron sheet having specified thickness, surface roughness and carbon content.

ZANG X, CAO N, QI H, SHAO Q

Nanocrystalline graphene used for complementary metal-oxide-semiconductor process, comprises grains in stack of graphene sheets.

KIM S, BYUN K, CHO Y, SHIN K, LEE E, LEE C, SONG H, SHIN H, YOON J, LEE S, LIM H, BYUN K E, CHO Y C, SHIN K W, LEE C S, SONG H J, SHIN H J, SU Y J, LEE S Y, LIM H S, LI Z, YOUN J, SHEN X, LI C, LI Y, ZHAO L, JIN S

Preparation of graphene/molybdenum disulfide heterojunction semiconductor film comprises cleaning copper foil substrate and silicon dioxide/silicon substrate, growing molybdenum-disulfide film and depositing graphene thin membrane.

ZHANG L

Tantalum carbide-coated carbon material for e.g., LED manufacturing equipment, comprises a carbon substrate, and a tantalum carbide coating layer formed on the carbon substrate.

JO D W, CAO D, WAN J, CHO D W

Preparation method of graphene-coated metal particles used in industry, involves filtering metal particles with uniform particles filter and performing corona treatment on the surface of the metal particles, and then uniformly mixing corona treated metal particles surface with graphene powder.

LI A, LI J