国家/地区 美国（3） 德国（2）
IPC部 B（3）
IPC大类 B82（3）
IPC小类 B82Y（3）
IPC B82Y030/00（3）
发明人 MAAROUF A（3） MARTYNA G J（3）
公开年 2013（2）
申请年
专利权人 MAAROUF A（3）

Doped, passivated graphene nanomesh used in field effect transistor, and semiconductor device, comprises graphene nanomesh comprising nanoholes, passivating element, and dopant bonded to passivating element.

ABOUKANDIL A, MAAROUF A, MARTYNA G J, MOHAMED H, NEWNS D M

Formation of patterned graphene layer on substrate used for low-noise amplifier, involves forming patterned structure(s) of carbide-forming metal or metal-containing alloy on substrate, applying layer of graphene and heating.

AFZALIARDAKANI A, MAAROUF A, MARTYNA G J, SAENGER K, AFZALIARDAKANI A C O I

Forming cleaned nanotube-graphene hybrid thin film on a substrate, comprises depositing the nanotube thin-film over a substrate to produce a layer of nanotube thin-film, and removing impurities from surface of layer of nanotube thin-film.

BOL A A, CHANDRA B, KASRY A, MAAROUF A, MARTYNA G J, TULEVSKI G S