国家/地区 中国（3）
IPC部 C（3）
IPC大类 C01（3）
IPC小类 C01B（3）
IPC C01B031/04（3）
发明人 JIANG H（3）
公开年 2016（2）
申请年 2016（2） 
专利权人 CHINESE ACAD.（3）

Preparing uniform graphene thin film by introducing metal substrate into chemical vapor deposition reaction chamber, heating chamber, annealing metal substrate and carrying out graphene nucleation on metal substrate surface.

GAO X, JIANG H, LI Z, SHI H, YANG G

Preparing substrate of multiple graphene films involve subjecting metal substrate to high temperature annealing, cooling metal substrate to room temperature, coating layer of carbon solution on metal substrate, and solidifying solution.

GAO X, JIANG H, LI Z, SHI H

Preparing a graphene film through low-temperature fixed-point nucleating comprises e.g. coating layer of carbon source solution on metal substrate, drying, patterning on metal substrate, graphene nucleating, diffusing and cooling.

GAO X, DU C, JIANG H, LI Z, SHI H, ZHANG Y, ZHU P, HUANG D