国家/地区 中国（3）
IPC部 C（3）
IPC大类 C04（3）
IPC小类 C04B（3）
IPC C04B041/50（3） C04B041/85（3） C01B031/04（2）
发明人 ZHANG C（3）
公开年 2013（3）
申请年 2013（2） 
专利权人 UNIV XIDIAN（3）

Graphene preparation method for nickel film annealing of silicon carbide substrate involves generating carbon film, introducing nickel film via growth device, electron beam evaporation and deposition and depositing nickel onto carbon film.

GUO H, LEI T, WEI C, ZHANG Y, ZHANG C

Copper film annealing of silicon carbide substrate in chlorine used in synthesizing graphene by forming carbon film on copper film by physical vapor deposition, plating copper layer, introducing argon gas and annealing.

GUO H, LEI T, ZHANG Y, ZHANG C, LING X

Preparation of silicon substrate patterned graphene for semiconductor element, involves growing silicon carbide layer, silica layer, pattern window, and carbon film on substrate, removing silica, coating copper film, and annealing.

GUO H, ZHANG K, ZHANG Y, ZHAO Y, LEI T, ZHANG C