国家/地区 美国（3）
IPC部 C（3）
IPC大类 C04（3）
IPC小类 C04B（3）
IPC B82Y030/00（2） C25D015/00（2） H01L021/02（2）
发明人
公开年 2021（3）
申请年 2020（2） 
专利权人

Formation of two-dimensional silicon carbide used as wide band gap semiconducting material in electronic applications, involves preparing solution comprising silicon carbide particles and solvent, ultrasonically processing solution, and centrifuging to extract two-dimensional silicon carbide.

CHABI S

Manufacture of dense layer of electrochemical device, involves providing substrate and suspension of non-agglomerated nanoparticles of material having specific particle size distribution, depositing layer on substrate, drying and densifying.

GABEN F

Doping method involves stacking sacrificial layer on doped layer, arranging doping material on the sacrificial layer, arranging electrodes on doping material and doped layer, and doping doping material into doped layer.

SON K, KIM T, SON A