国家/地区 世界知识产权组织（4） 日本（3） 美国（3） 中国（2） 韩国（2） 台湾（2）
IPC部 B（6）
IPC大类 B82（6）
IPC小类 C07B（6）
IPC B82Y030/00（5） B82Y040/00（5） C01B031/02（4）
C01B031/04（3） C07B061/00（2）
发明人
公开年
申请年
专利权人

New graphene nanoribbon used for semiconductor, solar cell, transparent electrode, high-speed transistor and organic electroluminescent device.

ITAMI K, ITO H, MATSUSHIMA K, NAKATSUJI H, UENO R, ISHIDA S, OKUDA S

Nitrogen doped graphene/silicon carbide microsphere nanocomposite material for selective organic catalytic reaction comprises silicon carbide and nitrogen doped graphene standing and growing on silicon carbide microsphere surface.

CHU Z, HU T, LI Y, JIANG Z, LI G, MA J, LI X

New graphene nanoribbon precursors comprising polycyclic aromatic hydrocarbon repeat units, used in graphene nanoribbons for field-effect transistors.

SCHWAB M G S, MUELLEN K, FENG X, DOESSEL L, SCHWAB M G, MULLEN K, DOSSEL L, SCHVAB M G

Producing graphene, useful for catalyzing chemical cross-coupling of at least two reactants of interest, comprises irradiating solid graphite oxide or a solution of graphite oxide with microwave radiation.

ELSHALL M S, ABDELSAYED V, HASSAN H M A, KHDER A E R S, ABOUZELD K M, DAI Q, AFSHANI P, GUPTON F, SIAMAKI A R, ALOTHMAN Z A M, ALKHATHLAN H Z, ABOUZEID K M

Functionalized graphene oxide, e.g. for electronic devices, comprises predetermined range of basal plane fraction of carbon atoms in sp2-hybridized state and surface functionalized with predetermined concentration of functional groups.

CHIA P, CHUA L, GOH G S, HO P, WANG S, CHUA R, CHIA P J, GO G S

Electroconductive variable triple layer carbon nanotube used as transistor material, has cylindrical graphene sheets having functional group in surface.

ANDO T, NAKAGAWA K, GAMO M, SATO Y, CHIKU Y, TAKAZAWA Y