国家/地区 日本（5） 美国（5） 世界知识产权组织（5） 中国（4） 欧洲专利局（EPO）（4） 韩国（3） 台湾（3） 印度（2）
IPC部 C（5）
IPC大类 C07（5）
IPC小类 C07B（5）
IPC C07C025/22（5）
发明人 FENG X（2） ITAMI K（2） MUELLEN K（2）
MULLEN K（2）
公开年 2014（2）
申请年 2012（2）  2013（2） 
专利权人 BASF CHINA C.（2） BASF SE（2） MAX PLANCK G.（2）

Manufacture of naphthyl silole compound used for preparing graphene nanoribbons, involves reacting brominated/iodinated biphenyl compound with lanthanoid-and-lithium-containing ate complex, and reacting obtained lanthanoid complex with silyl compound.

ITAMI K, ITO H, MATSUSHIMA K, MURAKAMI K, NAKATSUJI H, ISHIDA S

Organic-semiconductor film used for channel in transistor structure, has pseudo graphene structure including two-dimensional network structure which is formed continuously.

KAGAYA M, MATSUMOTO T, KATO D, KATO T

Edge-halogenation of graphene material used for electronic/optical/optoelectronic device involves reacting graphene material e.g. graphene, graphene nanoribbon, and/or graphene molecule with halogen-donor compound in presence of Lewis acid.

HINTERMANN T, MUELLEN K, FENG X, TAN Y, MULLEN K, TAN Y Z

New oligophenylene monomers, useful for synthesizing polymeric precursors for preparing graphene nanoribbons.

IVANOVICI S, SCHWAB M G S, FENG X, MUELLEN K, SCHWAB M G, MULLEN K, KLAUS M, SCHVAB M G, SCHWAB M, MILLEN K

Manufacture of optionally substituted aryl group-substituted polycyclic aromatic compound used for manufacturing graphene, involves reacting polycyclic aromatic compound and boron compound substituted by optionally substituted aryl group.

ITAMI K, MOCHIDA K, KAWASUMI K, SEGAWA Y, KAJINO T