国家/地区 中国（2）
IPC部 B（3）
IPC大类 B82（3） C25（3） C01（2）
IPC小类 B82Y（3）
IPC B82Y040/00（3）
发明人
公开年 2014（3）
申请年
专利权人

Method for preparing graphene sensitized-cadmium selenide-titanium dioxide nanocomposite film, involves adding hydrofluoric acid to deionized water followed by anodizing, depositing and calcining.

HOU B, LI H, WANG X

Formation of band-gap in graphene raw material used for e.g. light reception and light-emitting devices, involves forming graphene film on surface having nanosize porous holes active on graphene.

HASUO T, KUBOTA H, FUKUYAMA H, HOMMA Y, SAITO S, MASUDA H

Apparatus for manufacturing device used for preparing graphene for electronic circuit, comprises graphene structure including metal catalyst layer formed on substrate, protection layer, and graphene layer, and power unit.

LEE J, JUNG Y, KIM Y, LEE C, MOON C, LEE J H, JUNG Y S, KIM Y S, LEE C S, MOON C Y, MUN Z R