国家/地区 日本（4）
IPC部 C（4）
IPC大类 C01（4） C25（4） B82（3）
H01（3）
IPC小类 C01B（4）
IPC C01B031/02（4）
发明人 KOKUNI T（2） NAGATA T（2） OGUNI T（2）
OSADA T（2） TAKEUCHI T（2）
公开年 2013（2）
申请年 2012（4）
专利权人 SEMICONDUCTO.（3）

Formation of band-gap in graphene raw material used for e.g. light reception and light-emitting devices, involves forming graphene film on surface having nanosize porous holes active on graphene.

HASUO T, KUBOTA H, FUKUYAMA H, HOMMA Y, SAITO S, MASUDA H

Flexible substrate processing apparatus used for reducing graphene oxide to form graphene comprises substrate carrying-out portion; reduction treatment portion; washing portion; drying portion; and substrate carrying-in portion.

TAKAHASHI M, SAITO Y, MOMO J, MORIWAKA T, KUSUMOTO N, MORIWAKA K, YONEDA Y

Manufacturing method for graphene-coated object, involves heating graphene oxide deposited on uneven surface of object in vacuum or reducing atmosphere to reduce graphene oxide to graphene, after immersing object in graphene oxide solution.

OGUNI T, OSADA T, TAKEUCHI T, KOKUNI T, NAGATA T

Object useful as electrode of lithium-ion secondary battery, in electric device e.g. mobile phones, lighting devices and personal computers, and to manufacture graphene, comprises uneven surface and graphene layer over the uneven surface.

OGUNI T, OSADA T, TAKEUCHI T, NOMOTO K, KOKUNI T, NAGATA T