国家/地区 印度（2） 美国（2） 世界知识产权组织（2）
IPC部 B（4）
IPC大类 B82（4） C30（4） H01（3）
C01（2） C23（2）
IPC小类 B82Y（4）
IPC B82Y030/00（4）
发明人
公开年 2021（4）
申请年 2020（2）  2021（2） 
专利权人

Manufacturing of graphene nanofibers from cotton sources, involves soaking cotton fiber and cotton rope in ethyl alcohol and isopropyl alcohol to develop rapid carbon skeleton and flexibility within graphene nanofibers, and placing alcohol.

PANDEY S, KARAKOTI M, DHALI S, KARKI N, SAHOO N G

Formation of two-dimensional silicon carbide used as wide band gap semiconducting material in electronic applications, involves preparing solution comprising silicon carbide particles and solvent, ultrasonically processing solution, and centrifuging to extract two-dimensional silicon carbide.

CHABI S

Making bilayer graphene domain used to make optoelectronic devices, comprises e.g. dissolving decaborane into phenyl methyl ether, and coating obtained decaborane/phenyl methyl ether solution to cleaned metal foil/film layer.

LING D, LIU J, WEI D, ZHANG Q, HE X

Composition of article used for solar cell, comprises sapphire, silicon, gallium oxide or specific group semiconductor substrate, and intermediate specific group semiconductor layer, graphene layer, holes, and nanowires or nanopyramids.

MUNSHI M, WEMAN H, DHEERAJ D L, FIMLAND B M, VIGEN L, BARRIET D, PIMLANDBJOERNOBEEM, WIGGENREIDULPH, DAVID B