国家/地区 美国（3）
IPC部 B（3）
IPC大类 C01（3） C30（3）
IPC小类 C01B（3）
IPC C01B031/02（3）
发明人
公开年 2015（2）
申请年 2014（3）
专利权人

Manufacture of monocrystal graphene film for semiconductor device, involves forming polycrystalline graphene on substrate using hydrocarbon gas, growing graphene film, forming catalyst, heating and recrystallizing.

HWANG C, HWANG C Y

Formation of graphene for structure formation involves depositing metals on surface of silicon carbide and heating silicon carbide and metals under predetermined conditions.

IACOPI F, AHMED M, CUNNING B V

Growing graphene used e.g. in graphene material, comprises annealing metal substrate up to growth temperature for annealing time period and in presence of non-reducing gas, and introducing gas mixture to grow graphene over the substrate.

DUAN X, ZHOU H