国家/地区 中国（3）
IPC部 C（3）
IPC大类 C30（3）
IPC小类 C30B（3）
IPC C30B023/00（3）
发明人 DOU W（2）
公开年 2018（3）
申请年 2017（2） 
专利权人 UNIV SHAOXIN.（2）

Continuous preparation of ultra-large single crystal film useful in e.g. graphene film, involves heating single small crystal domain and growing ultra-large single crystal film on surface of high-temperature resistant substrate.

WU M, ZHANG Z, XU X, YU D, WANG E, LIU K

Preparation of nanowire-shaped organic single crystal domain for use in organic semiconductor device, involves spin-coating surface of copper-based graphene with poly(methyl methacrylate), annealing, depositing pentacene molecular film.

DOU W, SHI B

Preparing phthalocyanine monocrystalline thin films on graphene substrate modified by copper film comprises e.g. cutting the copper-based graphene, annealing, heating, and naturally cooling, and loading graphene substrate.

DOU W