国家/地区 中国（3） 韩国（2）
IPC部 C（4）
IPC大类 C30（4） H01（2）
IPC小类 C30B（4）
IPC C30B025/04（4）
发明人
公开年 2021（4）
申请年 2020（2）  2021（2） 
专利权人

Method for growing gallium nitride single crystal by high temperature heat treatment assisted two-dimensional coating mask substrate, involves adding polyvinylpyrrolidone to adjust viscosity of nanosheet solution, using spin coater to adsorb substrate, growing single crystals on mask substrates.

LV H, WU Y, HAO X, HU H, SHAO Y, ZHANG B

Single crystal diamond epitaxial growth by iridium-graphene structured buffer layer, comprises preparing layer of iridium-nickel composite patterned transition layer performing vacuum stress relief annealing and chemical vapor deposition.

LI C, XIA T, ZHENG Y, YUAN X, CHEN L, LIU J, WEI J

Producing epitaxial structure useful in flexible electronic device comprises providing multilayer graphene layer having through-holes, providing single crystal substrate having graphene layer formed and growing semiconductor structure.

HONG Y, JUNG J S, JUNGJOONSUCK

Composition of article used for solar cell, comprises sapphire, silicon, gallium oxide or specific group semiconductor substrate, and intermediate specific group semiconductor layer, graphene layer, holes, and nanowires or nanopyramids.

MUNSHI M, WEMAN H, DHEERAJ D L, FIMLAND B M, VIGEN L, BARRIET D, PIMLANDBJOERNOBEEM, WIGGENREIDULPH, DAVID B