国家/地区 中国（3）
IPC部 C（3）
IPC大类 C30（3）
IPC小类 C30B（3）
IPC C30B025/18（3）
发明人
公开年 2018（3）
申请年 2018（2） 
专利权人

Single crystal gallium nitride film growing involves forming amorphous silicon oxide layer on silicon substrate, transferring single crystal graphene to obtained silicon substrate, and then pretreating single crystal graphene surface.

YANG X, SHEN B, FENG Y, ZHANG Z, LIU K, ZHANG J, XU F, WANG X, TANG N

Preparing two-dimensional crystalline thin film layer of palladium diselenide involves using silicon carbide as substrate having graphene layer on surface of silicon carbide and maintaining temperature of substrate to growth temperature.

LI E, WANG D, FAN P, WANG Y, GAO H

Graphene epitaxial growth device comprises e.g. gas transportation system, epitaxial growth reaction chamber system, tail gas processing system, safety support system, cooling system, automatic control system utilized for supplying gas.

GUAN H