国家/地区 中国（4）
IPC部 C（4）
IPC大类 C30（4） C09（2）
IPC小类 C30B（4）
IPC C30B028/06（4）
发明人 LI S（2）
公开年 2011（2）
申请年 2011（2） 
专利权人 HEFEI YUNRON.（2）

Preparing growth graphene of doped germanium single crystal involves using horizontal gradient condensation method to synthesize germanium, cutting polycrystalline germanium, cutting polycrystalline germanium, crucible, quartz tube, quartz cap for cleaning, then processing dry, putting seed crystal.

LI Z

High thermal conductivity composite crucible useful for polycrystalline silicon ingot comprises crucible body having cavity structure with open upper end, and quartz ceramic structure layer laid on graphene-silica composite material layer.

LI J, XIE Y, GAO Y

Graphene-lanthanum titanium oxide/zinc-aluminum-zirconium corrosion resisting coating layer for polycrystalline silicon ingot furnace comprises alloy corrosion resisting layer and thermal insulating antiseptic layer.

LI S

Graphene-lanthanum nickel oxide/zinc-aluminum-titanium corrosion resisting coating layer used for polycrystalline silicon ingot furnace comprises alloy corrosion resisting layer and thermal insulating antiseptic layer.

LI S