国家/地区 美国（2）
IPC部 C（3）
IPC大类 C09（3）
IPC小类 C30B（3）
IPC
发明人
公开年 2021（3）
申请年 2021（2） 
专利权人

Formation of two-dimensional silicon carbide used as wide band gap semiconducting material in electronic applications, involves preparing solution comprising silicon carbide particles and solvent, ultrasonically processing solution, and centrifuging to extract two-dimensional silicon carbide.

CHABI S

Preparation method of single crystal graphene conductive ink involves obtaining predetermined amount of single crystal graphene, and preparing ink based on predetermined amount of single crystal graphene.

CHEN J, LIU W

Composition used in flexible near infrared photodetector, comprises nanowire.

IYER S, NALAMATI S R K, LI J