国家/地区 中国（2）
IPC部 C（3）
IPC大类 C23（3）
IPC小类 C23C（3）
IPC C23C014/24（2）
发明人
公开年 2018（2）
申请年 2018（3）
专利权人

Producing pressure sensor by depositing silicon oxide layer on silicon wafer surface, depositing chromium/gold layer, penetrating metal and oxide layers, nanostructuring silicon, depositing aluminum film on wafer and transferring graphene.

AVRAM M A, AVRAM M, TINCU B C, VOITINCU C, TUCUREANU V, MATEI A, BURINARU T A, MARCULESCU C V

Preparing cadmium zinc telluride film (CdZnTe) by directional growth on a graphene substrate comprises washing copper foil, placing in CVD growth chamber, heating, cooling, polishing, annealing, and immersing.

HUANG J, GU Q, ZHOU X, YANG F, ZOU T, TANG K, HUANG H, WANG L

Preparing two-dimensional crystalline thin film layer of palladium diselenide involves using silicon carbide as substrate having graphene layer on surface of silicon carbide and maintaining temperature of substrate to growth temperature.

LI E, WANG D, FAN P, WANG Y, GAO H