国家/地区 中国（4）
IPC部 C（4）
IPC大类 C30（4）
IPC小类 C30B（4）
IPC C30B025/18（3） H01L021/20（2）
发明人 LI L（2）
公开年 2015（4）
申请年 2015（4）
专利权人

Nitride epitaxy crystal structure comprises substrate, nitride epitaxy layer, graphene, patterning mask layer, and nitride epitaxy layer.

ZHANG R, ZHOU Y, SUN C

In-situ growth of graphene-based field effect transistor micro zone heating materials, comprises preparing graphene-based field effect transistor, applying voltage on ends of graphene electrode and allowing the growth of the material layer.

DENG L, HE L, JIANG M, LI L, XIE X, WU T, XIE H, WANG H, CHEN L

Preparing hierarchical graphene substrate of zinc oxide arrays used for preparing zinc oxide-based ultraviolet photo-detectors, involve carrying out non-hierarchical zinc oxide chemical vapor deposition growth of graphene nanosheet.

LI L, YANG H

Making graphene used as an impenetrable gas barrier, comprises providing seed gas in presence of metallic substrate, providing pulsed, ultraviolet laser beam and moving substrate or laser beam relative to other.

CASTRO A H, OZYILMAZ B, STIER A V, TOH C T, DU Z, CASTRO N A H