国家/地区 中国（4）
IPC部 C（4）
IPC大类 C30（4） C01（3）
IPC小类 C30B（4）
IPC C30B029/02（4） C01B031/04（3）
发明人
公开年 2009（4）
申请年 2008（2）  2009（2） 
专利权人

Epitaxial growth of graphene on silicon surface of silicon carbide by hydrogen etching silicon surface to eliminate surface scratch and form regular step-like strips, removing oxide from surface, and heating surface in presence of argon gas.

GUO H, TANG X, WANG D, WANG Y, ZHANG Y

Making intercalation electrode for electrochemical cell, involves forming graphene planes perpendicular to a current collector substrate and coextensive with electrode surface region by chemical vapor deposition using carbon gas composition.

LEV L C, SACHDEV A K, VERBRUGGE M W, XIAO X, XIAO Y, SHAW X

Extension of graphene from hexagonal phase ultrathin silicon carbide film on insulating underlay comprises subjecting insulating underlay to pre-treatment, attaching silicon carbide, and extending hexagonal phase monocrystal silicon carbide.

CENG Y, JI G, LI J, LIU X, SUN G, WANG L, YANG T, ZHAO W, ZHAO Y

Single-crystal graphene sheet, useful in a transparent electrode in electrical devices or electromagnetic devices including display devices and solar cells, comprises a polycyclic aromatic molecule and specified layers.

CHOI J, HAN J, SHIN H, YOON S, CHOI J Y, SHIN H J, IN Z, HAN J Y, YOON S M