国家/地区 美国（3）
IPC部 B（3）
IPC大类 B32（3）
IPC小类 B32B（3）
IPC B32B009/00（3）
发明人 AFZALIARDAKANI A（2） MAAROUF A（2） MARTYNA G J（2）
SAENGER K（2）
公开年 2015（3）
申请年 2015（3）
专利权人 EGYPT NANOTE.（2） INT BUSINESS.（2）

Method for forming patterned graphene layer on substrate of electronic device, involves removing patterned structure to produce patterned graphene layer on substrate, where patterned graphene layer on substrate provides carrier mobility.

AFZALIARDAKANI A, MAAROUF A, MARTYNA G J, SAENGER K

Graphene nanomesh structure for providing carrier mobility for electronic devices, has graphene that is reacted with patterned structure to remove graphene regions of patterned structure of carbide-forming metal or metal-containing alloy.

AFZALIARDAKANI A, MAAROUF A, MARTYNA G J, SAENGER K

Stacking structure for use in electronic device, has intermediate layer placed on graphene layer that is formed from linear type precursor, and material layer placed on intermediate layer and formed through atomic layer deposition.

JEONG S, PARK S, SHIN H, GU Y, KIM H, YANG J, GU Y H, JEONG S J, KIM H S, PARK S J, SHIN H J, YANG J H