国家/地区 韩国（5）
IPC部 C（5）
IPC大类 C23（5）
IPC小类 C23C（5）
IPC C23C016/02（5）
发明人 SHIN H（2） SHIN H J（2） YOON S（2）
公开年
申请年
专利权人 SAMSUNG ELEC.（2）

Transfer-free method for producing graphene thin film involves forming titanium buffer layer on target substrate and growing graphene thin film on titanium buffer layer in which both steps are performed in oxygen-free atmosphere.

YOON S, PARK B, YOON S G, PARK B J

Graphene composite electrode used for manufacturing electrochromic device, consists of graphene layer, atomic layer formed on graphene layer, and transparent conductive layer formed on atomic layer.

KIM H K, KIM Y K, HAN S H, LEE S J, SEO J W

Stacking structure for use in electronic device, has intermediate layer placed on graphene layer that is formed from linear type precursor, and material layer placed on intermediate layer and formed through atomic layer deposition.

JEONG S, PARK S, SHIN H, GU Y, KIM H, YANG J, GU Y H, JEONG S J, KIM H S, PARK S J, SHIN H J, YANG J H

Graphene ball conductive adhesive preparation by preparing polymer microsphere using monomer mixture, performing chemical vapor deposition to grow graphene on microsphere surface, and dispersing graphene ball into epoxy resin glue system.

CHEN Y, LI J, LI Y, ZHANG X, LEE Y

Preparing graphene sheet, useful in e.g. electrical device, comprises forming film comprising graphitizing catalyst, heat-treating gaseous carbon source in presence of the catalyst to form graphene, and cooling graphene to form sheet.

CHOI J, SHIN H, YOON S, CHOI J Y, SHIN H J, YOON S M, IN Z