国家/地区 韩国（6） 美国（6） 欧洲专利局（EPO）（2）
IPC部 B（6）
IPC大类 C01（6） B32（5） B82（5）
H01（4） B05（3） B44（2）
C23（2）
IPC小类 C01B（6）
IPC C01B031/04（6）
发明人 CHOI J（6）
公开年 2011（6）
申请年 2010（5） 
专利权人 SAMSUNG ELEC.（6） UNIV SUNGKYU.（2） UNIV SUNGKYU.（2）

Forming graphene nano ribbon used in display device involves depositing graphene sheet on surface of substrate, forming plasma mask with nano pattern on sheet, and forming nano pattern in sheet by plasma treating stack structure having mask.

SHIN H, CHOI J, LEE Y, HAN G, CHOI J Y, HAN G H, LEE Y H, SHIN H J

Material used in electrical device such as solar cell comprises graphene; and inorganic material having crystal system, where at least one crystal plane of the inorganic material is oriented parallel to the plane of the graphene.

CHOI J, CHOI W, CHOI D, KIM S, SHIN K, CHOI J Y, CHOI W M, CHOI D H, KIM S W, SHIN K S

Composition, useful in electrode, which is useful in display device comprising e.g. organic light emitting display device, and in solar cell, comprises graphene and dopant comprising an organic dopant and/or inorganic dopant.

SHIN H, CHOI W, CHOI J, YOON S, SHIN H J, CHOI W M, CHOI J Y, YOON S M

Graphene laminate, useful e.g. in transparent electrode, super-capacitor, fuel cell and solar cell, comprises substrate, binder layer on substrate, and graphene on binder layer, where the graphene is bound to substrate by binder layer.

SHIN H, CHOI J, HAN G, LEE Y, CHOI J Y, HAN G H, LEE Y H, SHIN H J

Graphene sheet used in e.g. field emission display, liquid crystal display, organic light emitting device, super-capacitor, field-effect transistor, or memory device comprises graphene containing ten or fewer wrinkles of the grapheme.

YOON S, CHOI J, CHOI W, SHIN H, YOON S M, CHOI J Y, CHOI W M, SHIN H J

Preparing graphene base, comprises disposing carbon-based material on surface of substrate incapable of catalyzing graphitization, disposing graphitization catalyst layer on material and forming graphene by thermally treating substrate.

SHIN H, CHOI W, CHOI J, YOON S, SHIN H J, CHOI W M, CHOI J Y, YOON S M