国家/地区 中国（3）
IPC部 C（3）
IPC大类 C01（3）
IPC小类 C01B（3）
IPC C01B032/186（3） C23C016/26（3）
发明人 CAO F（2） LIU Z（2） PENG H（2）
WANG K（2） WANG X（2） YANG H（2）
公开年 2021（3）
申请年
专利权人 UNIV PEKING（3）

Device for preparing graphene by plasma enhanced chemical vapor deposition (PECVD), has first region of deposition furnace that is provided with overlapped portion, and second polar plate that is connected to grounding end of plasma source.

LIU Z, WU Q, CAO F, WANG X, WANG K, YANG H, PENG H

Graphene cold wall growth device, has power supply whose two poles pass through two through holes of reaction chamber, where two poles of power supply are connected with upper electrode plate and lower electrode plate.

CHEN Z, JI N, SHEN C, XU S, ZHANG J

Graphene composite metal foil double-side growth device has chemical vapor deposition furnace comprising plasma glow region and heating growth region, and connected with unwinding shaft and winding shaft on both sides.

PENG H, CAO F, YANG H, WANG K, WANG X, LIU Z