国家/地区 英国（6）
IPC部 C（6）
IPC大类 C01（6） H01（3）
IPC小类 C01B（6）
IPC C01B032/182（2） C01B032/186（2） H01L021/02（2）
H01L029/16（2）
发明人 DIXON S（3） GUINEY I（3） GRIFFIN R M（2）
THOMAS S（2）
公开年 2022（6）
申请年 2021（6）
专利权人 PARAGRAF LTD（3）

Forming a graphene layer structure used in Hall effect sensor, involves providing growth substrate having growth surface, and forming graphene layer structure on growth surface by chemical vapor deposition method, where growth surface is formed of material consisting of e.g. magnesium aluminate.

GRIFFIN R M, THOMAS S, GUINEY I, DIXON S

Manufacturing electronic device precursor e.g. organic LED, involves providing silicon wafer having growth surface, forming insulative layer on growth surface, forming graphene monolayer or multi-layer structure on insulative layer, forming further layers and/or electrical contacts.

BADCOCK T J, KAINTH J, DIXON S, GUINEY I, GRIFFIN R M

Method for continuously mass-manufacturing high-purity graphene by using e.g. high frequency plasma, involves allowing expandable graphite and graphite intercalation compounds to be expanded by thermal plasma treatment such that graphene is exfoliated.

NGUYEN D H, CHOI S H, BAE K J

Cooking appliance comprises blank of appliance, and non-stick layer comprising primer layer of one side contact blank, where primer layer is uniformly distributed with sheet-shaped graphene and/or derivative alkene.

LV P, TSAI M, TSAI M F

Forming graphene on silicon substrate for electronic device, comprises providing silicon wafer having growth surface free of native oxides in reaction chamber, and nitriding growth surface with nitrogen-containing gas with wafer.

DIXON S, GUINEY I, THOMAS S, THOMAS S C S

Conversion of carbon material to graphene involves subjecting amorphous carbon material pellet submerged in molten inorganic material containing alkaline earth halide to electrochemical reaction in inert atmosphere for preset time and forming graphene pellet containing graphene flakes.

AHMAD N, AHAMID Z, ZAKARIA M, BISSETT M, KINLOCH I