国家/地区 中国（4）
IPC部 C（4）
IPC大类 C01（4） C23（3） B82（2）
C30（2）
IPC小类 C01B（4）
IPC C01B031/04（3） C23C016/26（3） C23C016/56（3）
B82Y030/00（2） B82Y040/00（2） C23C016/02（2）
发明人 ZHANG K（3） DENG P（2） GUO H（2）
LEI T（2） ZHANG Y（2）
公开年 2012（2）
申请年 2012（2） 
专利权人 ZHANG K（4）

Producing graphene involves hybrid water jet crushing of graphite to obtain single layer of graphene where graphite is crushed into segments centrifugally under improved water jet pressure, helps to obtain graphene of high quality.

WANG Y

Growing multilayer graphene film used to form flexible transparent electrode, comprises disposing carbonizing catalyst in reaction chamber, flowing gaseous carbon source/weak oxidizing vapor over catalyst surface, and cooling.

LOH K P, ZHANG K, CASTRO A H, LOH K

Structural graphene production on silicon carbide substrate for manufacturing microelectronic devices includes depositing layer of silicon dioxide as mask, coating mask surface, and exposing to form structured pattern.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG F

Manufacture of graphene on silicon carbide substrate involves producing double-layer carbon membrane, depositing nickel film on silicon substrate, placing carbon surface of double-layer carbon membrane on nickel membrane, and annealing.

DENG P, GUO H, LEI T, ZHANG K, ZHANG Y