国家/地区 日本（4）
IPC部 C（4）
IPC大类 C01（4） B23（2） H01（2）
IPC小类 C01B（4）
IPC C01B031/02（4） B23K026/00（2） B23K026/14（2）
B23K026/18（2） B23K026/60（2） B23K026/70（2）
发明人 FURUKAWA K（3） HIBINO H（3） IKEGAMI H（3）
TAKAMURA M（3）
公开年 2015（3）
申请年 2013（4）
专利权人 UNIV KYUSHU（4）

Formation of graphene used as channel material for post-silicon generation of field effect transistor, involves preparing silicon carbide substrate and irradiating pulse laser to desired process location of surface of silicon substrate.

FURUKAWA K, TAKAMURA M, HIBINO H, IKEGAMI H

Processing method for processing apparatus of graphene involves irradiating pulse laser to desired process location of graphene and removing graphene on desired location.

FURUKAWA K, TAKAMURA M, HIBINO H, IKEGAMI H

Processing apparatus for forming pattern of graphene thin film, has light source that irradiates light to process location of graphene for reflectance measurement, and measurement unit that measures reflectance of light in location.

FURUKAWA K, TAKAMURA M, HIBINO H, IKEGAMI H

Laminated composite used for e.g. transistor, comprises sapphire substrate made of alpha-aluminum oxide single crystal, and graphene layer formed in contact with sapphire substrate, where substrate contacts graphene layer with r-plane.

ARAKI T, TANAKA S