国家/地区 美国（6）
IPC部 C（6）
IPC大类 C30（6） C01（5） H01（5）
B82（3） B32（2） C09（2）
C23（2） C25（2）
IPC小类 C30B（6） C01B（5） B82Y（3）
H01L（3） H01M（3） B32B（2）
C23C（2） C25D（2）
IPC C30B033/00（6）
发明人
公开年 2014（2）
申请年 2009（2） 
专利权人

Production of graphene/semiconductor nanowire hybrid material composition for electrode, involves preparing catalyst metal-coated mixture using semiconductor particles made of e.g. tin and/or indium, and growing semiconductor nanowires.

JANG B Z

Production of functionalized graphene for lithium-ion batteries involves milling crystalline graphite in the presence of electrolyte solution to produce thinned intermediate material, combining with other electrolyte solution, and milling.

BOZALINA M, PERRET P, NAZARPOUR S, NAZARPOUR S S N

Large-surface-area single-crystal monolayer graphene material for e.g. transparent electrode, has graphene layer arranged on flat board or catalytic layer, where catalytic layer is arranged on crystal plane that is arranged on substrate.

PARK H B, KIM H, YOON H W, PARK S M, LEE M Y, HO B P, HEE W Y, SUN M P, YONG L M, LEE M, PARK H, PARK S, YOON H

Graphene film used in an electrode is obtainable by epitaxially growing metal layer on surface of substrate, peeling off the metal layer, and depositing graphene onto surface of metal layer.

WODTKE A, YU H K, ALEC W, HAK KI Y, YU H, YUK H K, YUK H

Method for isolating graphene thin film involves causing graphene thin film and polymer-based coating to be released from catalyst thin film, after curing polymer-based coating.

VEERASAMY V S, VEERASAMY V

Manufacture of graphene/silicon carbide composite material for electronic component e.g. semiconductor, involves removing oxide film from surface of silicon carbide single crystal substrate, exposing and heating.

KUSUNOKI M, NORIMATSU W