国家/地区 美国（4）
IPC部 B（4）
IPC大类 C30（4） H01（4） B82（3）
C01（3） C23（3） B32（2）
IPC小类 C30B（4）
IPC H01B001/04（4）
发明人 VEERASAMY V（2） VEERASAMY V S（2）
公开年 2011（4）
申请年 2009（2） 
专利权人 GUARDIAN GLA.（2） GUARDIAN IND（2） GUARDIAN IND.（2）

Manufacturing graphene sheet used as electrode material, involves growing graphene sheet on graphene growth support by applying carbon sources and heat; and forming ripple on the sheet by cooling the graphene growth support and sheet.

AHN J, HONG B, KIM K, AHN J H, HONG B H, KIM K S

Manufacture of doped graphene thin film for electrochromic devices comprises hetero-epitaxially growing intermediate graphene thin film on catalyst thin film, and doping intermediate graphene thin film with n- or p-type dopants.

VEERASAMY V S, VEERASAMY V

Manufacture of graphene thin film used in metal oxides window electrodes for solid-state solar cells involves disposing catalyst thin film on back support substrate, introducing hydrocarbon, and heating to promote graphene growth.

VEERASAMY V S, VEERASAMY V

Structure, useful for fabricating electrical devices, comprises layer of graphene supported on a substrate, which is pre-selected to have a specified coefficient of thermal expansion, for inducing controlled stress in graphene layer.

QUITORIANO N J, KAMINS T I, BRATKOVSKI A M